Improved Model of TiO2 Memristor

Abstract

Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

Keywords

• TiO2 memristor
• Port Equation
• State Equation
• Pickett’s model
• simulation