Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

Abstract

The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

Keywords

• photodiode structures
• Schottky barriers
• rectifying junction
• two-way sensitivity