Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Zhanjie Lu; Meijie Zhu; Gehui Zhang; Wenyu Liu; Shuo Han; Le Wang

Results in Physics (Jul 2022)

Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Zhanjie Lu,
Meijie Zhu,
Gehui Zhang,
Wenyu Liu,
Shuo Han,
Le Wang

Affiliations

Zhanjie Lu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China
Meijie Zhu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China
Gehui Zhang: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China
Wenyu Liu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China
Shuo Han: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China
Le Wang: Corresponding author.; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, People’s Republic of China

Journal volume & issue: Vol. 38
p. 105568

Abstract

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Back-gated WSe2 field effect transistor (FET) with amorphous BN (a-BN) capping layer was fabricated by a direct chemical vapor deposition (CVD) assemble technique, and the electrical performance was investigated. The field effect mobility and the on/off current ratio of the a-BN capped WSe2 FET both improved by one order of magnitude due to the clean and conformal contact between the BN and WSe2 interface that further reduced the extrinsic scattering. This technique could be further applied for other 2D material based devices.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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