Enhanced Optical Response of SnS/SnS<sub>2</sub> Layered Heterostructure

Der-Yuh Lin; Hung-Pin Hsu; Kuang-Hsin Liu; Po-Hung Wu; Yu-Tai Shih; Ya-Fen Wu; Yi-Ping Wang; Chia-Feng Lin

doi:10.3390/s23104976

Sensors (May 2023)

Enhanced Optical Response of SnS/SnS<sub>2</sub> Layered Heterostructure

Der-Yuh Lin,
Hung-Pin Hsu,
Kuang-Hsin Liu,
Po-Hung Wu,
Yu-Tai Shih,
Ya-Fen Wu,
Yi-Ping Wang,
Chia-Feng Lin

Affiliations

Der-Yuh Lin: Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan
Hung-Pin Hsu: Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
Kuang-Hsin Liu: Department of Electronic Engineering, National Changhua University of Education, No. 2, Shi-Da Rd., Changhua 500, Taiwan
Po-Hung Wu: Department of Electrical Engineering, National Dong Hwa University, No. 1, Sec. 2, Da Hsueh Rd., Shoufeng, Hualien 974, Taiwan
Yu-Tai Shih: Department of Physics, National Changhua University of Education, No. 1, Jin-De Rd., Changhua 500, Taiwan
Ya-Fen Wu: Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
Yi-Ping Wang: Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 243, Taiwan
Chia-Feng Lin: Department of Materials Science and Engineering, National Chung Hsing University, No. 145, Xingda Rd., South Dist., Taichung 402, Taiwan

DOI: https://doi.org/10.3390/s23104976
Journal volume & issue: Vol. 23, no. 10
p. 4976

Abstract

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The SnS/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS2 heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10−4 s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS2 heterostructure has been increased to 7.31 × 10−3 A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS2 heterostructure. These results indicate an application potential of the layered SnS/SnS2 heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS2, and presents an approach for designing high-performance photodetection devices.

Published in Sensors

ISSN: 1424-8220 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Chemical technology
Website: http://www.mdpi.com/journal/sensors

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