Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling

Abstract

An on-chip, high-extinction-ratio transverse electric (TE) pass polarizer utilizing a silicon oxynitride (SiON) slab has been proposed and experimentally verified. The power confinement ratio of the mode field is manipulated by using a SiON slab, where most of the power of the transverse magnetic (TM) mode is transferred to the upper SiON slab and then attenuated through radiation, while the TE mode passes through with relatively low propagation loss. Experimental results show that our proposed device can achieve an extinction ratio that varies from 20.5 to 32.7 dB in the wavelength range of 790 to 870 nm, with an insertion loss of 0.6 to 1.7 dB. Potentially, this design has lower material refractive index contrast, larger minimum etching size, smaller lengths, and less stray light crosstalk, which is beneficial for systems applications such as gyroscopes.

Keywords

• On-chip polarizer
• radiation coupling
• less stray light crosstalk