Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Abstract

Abstract In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and large‐resistance‐ratio switching. However, this means that the freedom of material/device design in applications is significantly reduced for this type of switching by the strict requirement of transition abruptness. Here, high‐speed, abrupt resistive switching with a switching time of 140 ns is demonstrated in epitaxial films of Ca2RuO4/LaAlO3 (001), which is a material with a nonthermal metal–insulator transition driven by current, despite the complete absence of an abrupt thermal transition in the resistivity–temperature characteristics. Highly smooth negative‐differential‐resistance behavior, very high cycling stability, and an endurance over 106 cycles are also demonstrated in the current–voltage and current–time characteristics, which confirm the nonstochastic nature of the abrupt switching. These results suggest that strict control of the resistivity–temperature characteristics is not necessarily required in a material with a nonthermal‐type metal–insulator transition to obtain high‐speed resistive switching because of the independence of the dynamics from those of the thermal transition, and this phenomenon potentially has important advantages in resistive switching applications.

Keywords

• current‐induced transitions
• metal–insulator transitions
• Mott memristors
• nonequilibrium steady states
• resistive switching
• ruthenium oxides