An Embedded Half-Bridge <i>Γ</i>-Z-Source Inverter with Reduced Voltage Stress on Capacitors
Hamed Mashinchi Maheri,
Dmitri Vinnikov,
Mohsen Hasan Babayi Nozadian,
Elias Shokati Asl,
Ebrahim Babaei,
Andrii Chub
Affiliations
Hamed Mashinchi Maheri
Power Electronics Research Group, Department of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, Estonia
Dmitri Vinnikov
Power Electronics Research Group, Department of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, Estonia
Mohsen Hasan Babayi Nozadian
Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran
Elias Shokati Asl
Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran
Ebrahim Babaei
Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran
Andrii Chub
Power Electronics Research Group, Department of Electrical Power Engineering and Mechatronics, Tallinn University of Technology, 19086 Tallinn, Estonia
In this paper, an embedded half-bridge Z-source inverter based on gamma structure is proposed. In contrast with the classical half-bridge inverter, the proposed inverter can generate zero voltage levels in output. High voltage gain and low voltage stress on capacitors are the main advantages of the proposed converter. The value of the boost factor in the proposed structure is increased by changing both the shoot-through (ST) duty cycle and turns ratio of the transformer. The operating principle of the proposed converter in four operating modes is presented. We also calculate the critical inductance and compare the proposed converter with conventional topologies. In addition, power loss and THD analysis are presented. Finally, PSCAD/EMTDC software is used to verify the correct operation of the proposed inverter and the experimental results.
