Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Hongyan Xu; Feng Han; Chengkai Xia; Siyan Wang; Ranjith K. Ramachandran; Christophe Detavernier; Minsong Wei; Liwei Lin; Serge Zhuiykov

doi:10.1186/s11671-019-3028-5

Nanoscale Research Letters (May 2019)

Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Hongyan Xu,
Feng Han,
Chengkai Xia,
Siyan Wang,
Ranjith K. Ramachandran,
Christophe Detavernier,
Minsong Wei,
Liwei Lin,
Serge Zhuiykov

Affiliations

Hongyan Xu: School of Materials Science and Engineering, North University of China
Feng Han: School of Materials Science and Engineering, North University of China
Chengkai Xia: School of Materials Science and Engineering, North University of China
Siyan Wang: School of Materials Science and Engineering, North University of China
Ranjith K. Ramachandran: Department of Solid State Science, Ghent University
Christophe Detavernier: Department of Solid State Science, Ghent University
Minsong Wei: Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California
Liwei Lin: Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California
Serge Zhuiykov: School of Materials Science and Engineering, North University of China

DOI: https://doi.org/10.1186/s11671-019-3028-5
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 1

Abstract

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Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: ‘Ranish M. Ramachandran’ should be ‘Ranjith K. Ramachandran’.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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