Temperature rise and stress induced by microcracks in accelerating structures

Abstract

The temperature rise and induced stress due to Ohmic heating in the vicinity of microcracks on the walls of high-gradient accelerating structures are considered. The temperature rise and induced stress depend on the orientation of the crack with respect to the rf magnetic field, the shape of the crack, and the power and duration of the rf pulse. Under certain conditions the presence of cracks can double the temperature rise over that of a smooth surface. Stress at the bottom of the cracks can be several times larger than that of the case when there are no cracks. We study these effects both analytically and by computer simulation. It is shown that the stress in cracks is maximal when the crack depth is on the order of the thermal penetration depth.