Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials
Seigo Ito,
Shusaku Kanaya,
Hitoshi Nishino,
Tomokazu Umeyama,
Hiroshi Imahori
Affiliations
Seigo Ito
Department of Materials and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan
Shusaku Kanaya
Department of Materials and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan
Hitoshi Nishino
Energy Technology Laboratories, Osaka Gas Co., Ltd., Osaka 554-0051, Japan
Tomokazu Umeyama
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan
Hiroshi Imahori
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan
Using X-ray diffraction (XRD), it was confirmed that the deposition of hole-transporting materials (HTM) on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition.
