Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers

Abstract

Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The occurrence of RRS is attributed to the resonance of outgoing photons scattered in multiphonon processes with electronic transitions involving an impurity (native defects) band.