High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates

Pavel Kirilenko; Mohammed A. Najmi; Bei Ma; Artem Shushanian; Martin Velazquez-Rizo; Daisuke Iida; Kazuhiro Ohkawa

doi:10.1063/5.0136205

AIP Advances (Apr 2023)

High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates

Pavel Kirilenko,
Mohammed A. Najmi,
Bei Ma,
Artem Shushanian,
Martin Velazquez-Rizo,
Daisuke Iida,
Kazuhiro Ohkawa

Affiliations

Pavel Kirilenko: Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Mohammed A. Najmi: Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Bei Ma: Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan
Artem Shushanian: Chemistry Program, Computer, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Martin Velazquez-Rizo: Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Daisuke Iida: Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Kazuhiro Ohkawa: Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

DOI: https://doi.org/10.1063/5.0136205
Journal volume & issue: Vol. 13, no. 4
pp. 045011 – 045011-6

Abstract

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We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10–1–2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm−2 in the case of screw-type and edge-type dislocations, respectively.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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