High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates
Pavel Kirilenko,
Mohammed A. Najmi,
Bei Ma,
Artem Shushanian,
Martin Velazquez-Rizo,
Daisuke Iida,
Kazuhiro Ohkawa
Affiliations
Pavel Kirilenko
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Mohammed A. Najmi
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Bei Ma
Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan
Artem Shushanian
Chemistry Program, Computer, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Martin Velazquez-Rizo
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Daisuke Iida
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Kazuhiro Ohkawa
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10–1–2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm−2 in the case of screw-type and edge-type dislocations, respectively.
