A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Rui Gao; Yijun Shi; Zhiyuan He; Yiqiang Chen; Yunfei En; Yun Huang; Zhigang Ji; Jianfu Zhang; Weidong Zhang; Xuefeng Zheng; Jinfeng Zhang; Yang Liu

doi:10.1109/JEDS.2020.3016022

IEEE Journal of the Electron Devices Society (Jan 2020)

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Rui Gao,
Yijun Shi,
Zhiyuan He,
Yiqiang Chen,
Yunfei En,
Yun Huang,
Zhigang Ji,
Jianfu Zhang,
Weidong Zhang,
Xuefeng Zheng,
Jinfeng Zhang,
Yang Liu

Affiliations

Rui Gao: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Yijun Shi: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Zhiyuan He: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Yiqiang Chen: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Yunfei En: ORCiD; Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Yun Huang: Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, China
Zhigang Ji: ORCiD; National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, China
Jianfu Zhang: ORCiD; School of Engineering, John Moores University, Liverpool, U.K.
Weidong Zhang: ORCiD; School of Engineering, John Moores University, Liverpool, U.K.
Xuefeng Zheng: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Jinfeng Zhang: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Yang Liu: School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, China

DOI: https://doi.org/10.1109/JEDS.2020.3016022
Journal volume & issue: Vol. 8
pp. 905 – 910

Abstract

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MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of border traps in AlGaN/GaN MIS-HEMT gate stack is extracted and investigated through a discharging-based trap energy profile technique. The technique adopts spot-Id sense measurement with 1 millisecond measurement time to capture the “whole (both fast and slow)” border traps. The results are beneficial to improve the reliability of AlGaN/GaN MIS-HEMT.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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