Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics
Georgy Teplov,
Dmitry Zhevnenko,
Fedor Meshchaninov,
Vladislav Kozhevnikov,
Pavel Sattarov,
Sergey Kuznetsov,
Alikhan Magomedrasulov,
Oleg Telminov,
Evgeny Gornev
Affiliations
Georgy Teplov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Dmitry Zhevnenko
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Fedor Meshchaninov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Vladislav Kozhevnikov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Pavel Sattarov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Sergey Kuznetsov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Alikhan Magomedrasulov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Oleg Telminov
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
Evgeny Gornev
Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of six Ni/Si3N4/p+Si-based memristors up to their failure. The basis of the proposed idea is the joint analysis of resistance change curves with the volt-ampere characteristics registered by the auxiliary signal. The paper considers the existence of stable switching regions of the high-resistance state and their interpretation as stable states in which the device evolves. The stable regions’ volt-ampere characteristics were simulated using a compact mobility modification model and a first-presented target function to solve the optimization problem.
