Deep gallium-induced defect states in Pb1-xSnxTe

Abstract

The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi level position for “metallic” samples were determined and used to build the energy level diagram.