Open Physics
(Apr 2011)
TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors
- Łaszcz Adam,
- Ratajczak Jacek,
- Czerwinski Andrzej,
- Kątcki Jerzy,
- Breil Nicolas,
- Larrieu Guilhem,
- Dubois Emmanuel
Affiliations
- Łaszcz Adam
- Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
- Ratajczak Jacek
- Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
- Czerwinski Andrzej
- Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
- Kątcki Jerzy
- Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
- Breil Nicolas
- IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France
- Larrieu Guilhem
- IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France
- Dubois Emmanuel
- IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France
- DOI
-
https://doi.org/10.2478/s11534-010-0135-4
- Journal volume & issue
-
Vol. 9,
no. 2
pp.
423
– 427
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