Simulation of Extended Wavelength Avalanche Photodiode with the Type-II Superlattice Absorption Layer

Abstract

The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage increased with the doping concentration of the absorption layer. When the thickness of the multiplication layer increased from 0.1 μm to 0.6 μm, the linear range of punchthrough voltage increased from 16 V to 48 V, and the breakdown voltage decreased at first and then increased when the multiplication layer reached the critical thickness at 0.35 μm. The grading layer could not only slow down the hole carrier, but also adjust the electric field. The dark current was reduced to about 10 nA and the gain was over 100 when the APD was cooled to 240 K. The response wavelength APD could be extended to 2.8 μm by fine tuning the superlattice parameters. The simulation results indicated that the APD using superlattice materials has potential to achieve a long wavelength response, a high gain, and a low dark current.

Keywords

• APD
• extended wavelength
• InGaAs/GaAsSb superlattice
• I-V characteristics
• electric field distribution