Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga<sub>2</sub>O<sub>3</sub> Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition
Yi Shen,
Hong-Ping Ma,
Zhen-Yu Wang,
Lin Gu,
Jie Zhang,
Ao Li,
Ming-Yang Yang,
Qing-Chun Zhang
Affiliations
Yi Shen
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Hong-Ping Ma
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Zhen-Yu Wang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Lin Gu
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Jie Zhang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Ao Li
CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Ming-Yang Yang
Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Qing-Chun Zhang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.
