Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Yafei Fu,
Jie Sun,
Zaifa Du,
Weiling Guo,
Chunli Yan,
Fangzhu Xiong,
Le Wang,
Yibo Dong,
Chen Xu,
Jun Deng,
Tailiang Guo,
Qun Yan
Affiliations
Yafei Fu
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Jie Sun
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
Zaifa Du
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Weiling Guo
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Chunli Yan
Department of Information and Automation, Library of Fuzhou University, Fuzhou 350116, China
Fangzhu Xiong
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Le Wang
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Yibo Dong
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Chen Xu
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Jun Deng
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China
Tailiang Guo
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
Qun Yan
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China
Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called massive transfer, which is arguably the largest obstacle preventing the commercialization of micro-LEDs. We combined GaN devices with emerging graphene transistors and for the first-time designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a graphene FET connected in series. The p-electrode of the micro-LED was connected to the source of the driving transistor. The FET was used to tune the work current in the micro-LED. Meanwhile, the transparent electrode of the micro-LED was also made of graphene. The operation of the device was demonstrated in room temperature conditions. This research opens the gateway to a new field where other two-dimensional (2D) materials can be used as FET channel materials to further improve transfer properties. The 2D materials can in principle be grown directly onto GaN, which is reproducible and scalable. Also, considering the outstanding properties and versatility of 2D materials, it is possible to envision fully transparent micro-LED displays with transfer-free active matrices (AM), alongside an efficient thermal management solution.
