IEEE Photonics Journal (Jan 2022)

High External Quantum Efficiency Green Light Emitting Diodes on Stress-Manipulated AlNO Buffer Layers

  • Aimin Wang,
  • Kaixuan Chen,
  • Jinchai Li,
  • Junyong Kang

DOI
https://doi.org/10.1109/JPHOT.2022.3140775
Journal volume & issue
Vol. 14, no. 4
pp. 1 – 5

Abstract

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We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a result, the dislocation density and the in-plane compressive stress caused by lattice mismatch were greatly reduced, while the interface quality of the InGaN/GaN multiple quantum wells and the uniformity of the indium composition were greatly improved. At 20A/cm2, the external quantum efficiency and wall plug efficiency of the 526.4-nm-green LEDs grown on the sputtered AlNO buffer reached 46.1% and 41.9%, which were both higher than reported values.

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