An improved SiC SWITCH‐MOS with superior forward performance

Abstract

Abstract An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to current conduction, which reduces the specific on‐resistance (RON, SP) and improves static characteristics. Besides, the split‐gate is able to transform the gate‐drain capacitance (CGD) and improve the dynamic characteristics. Therefore, a superior forward performance that SWITCH‐MOS always craves is achieved. According to the simulation results, compared to the conventional SWITCH‐MOS with almost the same BV, the proposed one reduces the RON, SP by 57% and the CGD by 59% while gaining equally advanced reverse performance. Its reverse conduction voltage is only −1.78 V, but its figure of merit reaches 1.67 GW/cm2 and 65 mΩ·nC, which is attractive for the application in power inverters.

Keywords

• MOSFET
• power MOSFET
• Schottky diodes
• semiconductor device breakdown
• semiconductor devices