Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K.

Abstract

Active areas of bismuth Hall Probe sensors in the range (0.1 – 1) µm have been fabricated on Si/SiO2 with GaAs substrates at thickness of bismuth from (40, 60 and 70) nm by Electron Beam Lithography (EBL) and lift-off process. Scanning Hall probe microscopy (SHPM) technique at room temperature (300) K used to study Hall voltage, characterization of the noise figures and minimum detectable fields. Results are presented for both 0.4µm sensor, which is found minimum detectable fields (Bmin) ~1.1 G/ Hz0.5 with dc currents about 5µA. But minimum detectable fields for HP size 0.6 µm at dc currents 20µA is Bmin~0.6 G/Hz0.5. The performance of our Hall probe devices at 300K could be improved still further are discussed.

Keywords

• bismuth hall probe devices
• gaas
• scanning hall probe microscopy technique