Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Abstract

Abstract The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.

Keywords

• tunnel diodes
• semiconductor diodes
• pulse measurement
• nanoelectronics
• semiconductor epitaxial layers
• quantum well lasers