AIP Advances (Jun 2021)

Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

  • Z. Bian,
  • K. J. Rae,
  • B. C. King,
  • D. Kim,
  • G. Li,
  • S. Thoms,
  • D. T. D. Childs,
  • N. D. Gerrard,
  • N. Babazadeh,
  • P. Reynolds,
  • J. Grant,
  • A. F. McKenzie,
  • J. R. Orchard,
  • R. J. E. Taylor,
  • R. A. Hogg

DOI
https://doi.org/10.1063/5.0053535
Journal volume & issue
Vol. 11, no. 6
pp. 065315 – 065315-5

Abstract

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This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.