Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si

Abstract

Way for the fabrication and results of studies of photoelectric features of twospectrum photocell with two Schottky barrier contacts Ti-p-Si on one party of the silicon plate and ohmic silicide contact NiSi-p-Si situated on the opposite party of the plate are considered. It is shown that explored photocell can be used for the transformation of the energy of the radiation in the electrical energy at room temperature in two ranges: or in near infrared region of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. This characteristic of the designed photocell will allow increasing its application. Photocell possesses a simple structure and technology with a time of its fabrication in the interval (2,5–3) of the hour.

Keywords

• method of fabricating the photocell
• p-type silicon
• schottky barrier contacts ti-p-si
• silicide contact nisi-p-si