Mn3GaC inverse perovskite thin films by magnetron sputtering from elemental targets

Abstract

We have deposited epitaxial thin films of the inverse perovskite Mn _3 GaC using magnetron sputtering from elemental targets. Two substrates were used, MgO (111) and (100), resulting in corresponding orientation of the Mn _3 GaC thin films. Both samples displayed magnetic properties consistent with an AFM to FM transition at ∼170 K and a Curie temperature around 265 K, evaluated with vibrating sample magnetometry (in-plane measurements). These two ground states are further supported by first principles calculations. Based on that the two orientations of Mn _3 GaC display very similar magnetic properties, it can be concluded that shape anisotropy dominates over the material’s easy axis.

Keywords

• inverse perovskite
• magnetism
• first principles calculations
• thin films
• magnetic ground state