High-performance complementary resistive switching in ferroelectric film

Pan Zhang; Wenjing Zhai; Zhibo Yan; Xiang Li; Yongqiang Li; Shuhan Zheng; Yongsen Tang; Lin Lin; J.-M. Liu

doi:10.1063/5.0043536

AIP Advances (Jun 2021)

High-performance complementary resistive switching in ferroelectric film

Pan Zhang,
Wenjing Zhai,
Zhibo Yan,
Xiang Li,
Yongqiang Li,
Shuhan Zheng,
Yongsen Tang,
Lin Lin,
J.-M. Liu

Affiliations

Pan Zhang: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Wenjing Zhai: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Zhibo Yan: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xiang Li: Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, China
Yongqiang Li: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Shuhan Zheng: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yongsen Tang: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Lin Lin: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
J.-M. Liu: Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

DOI: https://doi.org/10.1063/5.0043536
Journal volume & issue: Vol. 11, no. 6
pp. 065202 – 065202-6

Abstract

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The complementary resistive switch (CRS) offers a promising logic-in-memory functionality and is a potential solution to the “von Neumann bottleneck” problem, but the CRS structure composed of two anti-serially connected bipolar resistive switching cells limits device application. In this work, we report a high-performance CRS in a single layer of ferroelectric LiTaO3 film. The device has continuous tunable steady-states, stable operating voltages, a maximum off/on ratio more than 102, good retention longer than 105 s, and a good endurance of over 107 cycles. Besides, the energy consumption of the CRS is tunable by defect engineering. Experiments suggest that the ferroelectric domain switching with charged domain walls possibly contributes to the stability of the CRS in LiTaO3 film.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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