Micro and Nano Engineering (Sep 2023)

Development of EUV interference lithography for 25 nm line/space patterns

  • A.K. Sahoo,
  • P.-H. Chen,
  • C.-H. Lin,
  • R.-S. Liu,
  • B.-J. Lin,
  • T.-S. Kao,
  • P.-W. Chiu,
  • T.-P. Huang,
  • W.-Y. Lai,
  • J. Wang,
  • Y.-Y. Lee,
  • C.-K. Kuan

Journal volume & issue
Vol. 20
p. 100215

Abstract

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In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

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