APL Materials
(Nov 2017)
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Hanjong Paik,
Zhen Chen,
Edward Lochocki,
Ariel Seidner H.,
Amit Verma,
Nicholas Tanen,
Jisung Park,
Masaki Uchida,
ShunLi Shang,
Bi-Cheng Zhou,
Mario Brützam,
Reinhard Uecker,
Zi-Kui Liu,
Debdeep Jena,
Kyle M. Shen,
David A. Muller,
Darrell G. Schlom
Affiliations
Hanjong Paik
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Zhen Chen
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Edward Lochocki
Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
Ariel Seidner H.
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Amit Verma
Department of Electrical Engineering, IIT Kanpur, Kanpur 208016, India
Nicholas Tanen
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Jisung Park
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Masaki Uchida
Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan
ShunLi Shang
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Bi-Cheng Zhou
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Mario Brützam
Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
Reinhard Uecker
Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
Zi-Kui Liu
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Debdeep Jena
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Kyle M. Shen
Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
David A. Muller
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
DOI
https://doi.org/10.1063/1.5001839
Journal volume & issue
Vol. 5,
no. 11
Abstract
Read online
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO)2 crystallographic shear defects or point defects—significantly reduce the electron mobility.
Published in APL Materials
ISSN
2166-532X (Online)
Publisher
AIP Publishing LLC
Country of publisher
United States
LCC subjects
Technology: Chemical technology: Biotechnology
Science: Physics
Website
http://aplmaterials.aip.org
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