Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

• Thomas Gerrer,
• Heiko Czap,
• Thomas Maier,
• Fouad Benkhelifa,
• Stefan Müller,
• Christoph E. Nebel,
• Patrick Waltereit,
• Rüdiger Quay,
• Volker Cimalla

Affiliations

Thomas Gerrer

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Heiko Czap

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Thomas Maier

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Fouad Benkhelifa

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Stefan Müller

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Christoph E. Nebel

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Patrick Waltereit

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Rüdiger Quay

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

Volker Cimalla

Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany