Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources
Jianfei Li,
Duo Chen,
Kuilong Li,
Qiang Wang,
Mengyao Shi,
Chen Cheng,
Jiancai Leng
Affiliations
Jianfei Li
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
Duo Chen
International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
Kuilong Li
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
Qiang Wang
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
Mengyao Shi
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
Chen Cheng
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
Jiancai Leng
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
The excitation power and temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra were studied in green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED). An examination of the PL-325, PL-405, and EL spectra at identical optical or electrical generation rates at room temperature showed that the normalized spectra exhibited different characteristic peaks. In addition, the temperature behavior of the peak energy was S-shaped for the PL-405 spectrum, while it was V-shaped for the EL spectrum. These measurement results demonstrate that the excitation source can affect the carrier dynamics about the generation (injection), transfer, and distribution of carriers.
