Spray mist-assisted drilling of through silicon vias (TSV) using nanosecond laser: Influence of CNT nanofluid

Abstract

Through Silicon Vias (TSV) are crucial in semiconductor technology for vertically connecting multiple stacks in 3D packaging. High aspect ratio, smooth and slightly tapered TSVs enhance layout efficiency and void-free filling. Being contact-less and dry-etching process, laser machining is a promising technique to fabricate TSVs. A percussion laser drilling approach was used to fabricate TSVs on a 500 μm thick silicon wafer with a 1064 nm ns laser. Four environments such as air, compressed air jet, water mist, carbon nanotube (CNT) fluid mist were employed to assess laser machining effects on TSV performance in terms of entrance and exit diameters, recast layer, side wall damage, and taper angle. Optimized process parameters (laser pulse energy and pulse number) were derived from an ANN prediction model. Laser drilling under CNT mist produced relatively circular (entrance diameter), straight, and clean TSVs. Reduced debris redeposition was observed under air jet, water mist, and CNT mist compared to air. Minimal sidewall damage occurred under water mist and CNT mist as compared to those machined in air and air jet. CNT mist yielded TSVs with less recast layer (∼7 μm), taper angle (∼1.05 deg.), and heat affected zone (HAZ) thickness (∼50 μm). Enhanced machining quality may be attributed to increased thermal conductivity of CNT nanofluid and pressurized mist flow rate, improving cooling and debris removal. Furthermore, a detailed investigation of TSV using SEM was performed and the findings were compared to those of other research groups.

Keywords

• TSV
• Nanosecond laser
• CNT
• Recast
• Spray mist