A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu; Peng Chen; Xiancheng Liu; Jianguo Zhao; Tinggang Zhu; Dunjun Chen; Zili Xie; Jiandong Ye; Xiangqian Xiu; Fayu Wan; Jianhua Chang; Rong Zhang; Youdou Zheng

Chip (Mar 2024)

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu,
Peng Chen,
Xiancheng Liu,
Jianguo Zhao,
Tinggang Zhu,
Dunjun Chen,
Zili Xie,
Jiandong Ye,
Xiangqian Xiu,
Fayu Wan,
Jianhua Chang,
Rong Zhang,
Youdou Zheng

Affiliations

Ru Xu: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Peng Chen: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.
Xiancheng Liu: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Jianguo Zhao: School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Tinggang Zhu: Corenergy Semiconductor Incorporation, Suzhou 215600, China
Dunjun Chen: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Zili Xie: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Jiandong Ye: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Xiangqian Xiu: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Fayu Wan: School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Jianhua Chang: School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Rong Zhang: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.
Youdou Zheng: The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.

Journal volume & issue: Vol. 3, no. 1
p. 100079

Abstract

Read online

GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.

Published in Chip

ISSN: 2709-4723 (Print); 2772-2724 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Technology (General): Industrial engineering. Management engineering: Information technology
Website: https://www.sciencedirect.com/journal/chip

About the journal

Abstract

Keywords