A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
Ru Xu,
Peng Chen,
Xiancheng Liu,
Jianguo Zhao,
Tinggang Zhu,
Dunjun Chen,
Zili Xie,
Jiandong Ye,
Xiangqian Xiu,
Fayu Wan,
Jianhua Chang,
Rong Zhang,
Youdou Zheng
Affiliations
Ru Xu
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Peng Chen
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.
Xiancheng Liu
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Jianguo Zhao
School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Tinggang Zhu
Corenergy Semiconductor Incorporation, Suzhou 215600, China
Dunjun Chen
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Zili Xie
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Jiandong Ye
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Xiangqian Xiu
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Fayu Wan
School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Jianhua Chang
School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Rong Zhang
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.
Youdou Zheng
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.
