SiGe epitaxial films with dislocations for the switchable memory: the accurate first-principle calculations

Abstract

The methods of the theory of the functional of electron density and pseudopotential from the first principles obtained the characteristics of an electronic subsystem of the RRAM (Resistive Random Access Memory) layer constructed on the basis of epitaxial films Si0.9Ge0.1 with dislocations and embedded in them silver atoms. The spatial distributions of the density of valence electrons and their cross sections within the cell, the distribution of the density of electronic states, and electric charges in the vicinity of the silicon atoms in different atomic environments are calculated. It is investigated how changes in the electronic subsystem of investigated objects influence the change of their properties from non-conducting to conducting ones.

Keywords

• резистивна пам’ять довільного доступу, функціонал електронної густини, псевдопотенціал із перших принципів, електронна структура, густина електронних станів.