1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance
Xia-Yida MaXueer,
Yi-Ming He,
Zun-Ren Lv,
Zhong-Kai Zhang,
Hong-Yu Chai,
Dan Lu,
Xiao-Guang Yang,
Tao Yang
Affiliations
Xia-Yida MaXueer
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yi-Ming He
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Zun-Ren Lv
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Zhong-Kai Zhang
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Hong-Yu Chai
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Dan Lu
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Xiao-Guang Yang
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Tao Yang
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond −9 dB.
