Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
Hong Wang,
Ming Zhong,
Lijun Tan,
Wei Shi,
Quanbin Zhou
Affiliations
Hong Wang
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Ming Zhong
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Lijun Tan
Guangdong Provincial Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China
Wei Shi
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Quanbin Zhou
Guangdong Provincial Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China
In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
