Micromachines (Feb 2024)

Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers

  • Ruiliang Li,
  • Shaohua Zhou,
  • Cheng Yang,
  • Jian Wang

DOI
https://doi.org/10.3390/mi15020246
Journal volume & issue
Vol. 15, no. 2
p. 246

Abstract

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A power amplifier (PA) stands as a central module within the electronic information system (EIS), and any variation in a PA’s specifications has a direct impact on the EIS’s performance, especially in the face of temperature fluctuations. In examining the influence of PA specification changes on the EIS, we employed support vector machine (SVM) to model the behavior of the temperature characteristics of 0.3–1.1 GHz complementary metal oxide semiconductor (CMOS) class-A broadband PAs. The results show that the parameters of S11, S12, S21, and S22 can be effectively modeled. SVM outperforms Elman and GRNN in terms of combined modeling time and modeling accuracy. This research can be extended to modeling the behavior of other types of power amplifiers or devices and circuits.

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