Vacuum-ultraviolet (λ < 200 nm) photodetector array

Abstract

Abstract The vacuum-ultraviolet (VUV, 10–200 nm) imaging photodetector (PD) based on the wide bandgap semiconductor (WBGS) can realize a more detailed observation of solar storms than the silicon ones. Here, an 8 × 8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented, exhibiting the shortest cutoff wavelength (203 nm) reported so far. The PD array with a Pt/AlN/SiC/Ti/Au photovoltaic structure shows an excellent selective response to VUV light, an extremely low dark current density of 2.85 × 10–11 A·cm−2@ -2 V, a responsivity of 0.054 A·W−1@ 0 V and an ultra-short rise time of 13 ns. Also, the clear boundaries and an obvious contrast between light and dark of the VUV image displayed in the imaging measurement indicate the good imaging ability of this PD array, which can be used for the imaging application with high signal-to-noise ratio and high response speed. These results provide rich experience for the development of VUV imaging PDs based on WBGSs both in their fabrication and the practical applications in VUV detection.

Keywords

• Vacuum-ultraviolet detection
• Photodetector array
• Wide bandgap semiconductors
• Imaging