MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

Ruibo Chen; Hao Wei; Hongxia Liu; Fei Hou; Qi Xiang; Feibo Du; Cong Yan; Tianzhi Gao; Zhiwei Liu

doi:10.3390/mi14030632

Micromachines (Mar 2023)

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

Ruibo Chen,
Hao Wei,
Hongxia Liu,
Fei Hou,
Qi Xiang,
Feibo Du,
Cong Yan,
Tianzhi Gao,
Zhiwei Liu

Affiliations

Ruibo Chen: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Hao Wei: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Hongxia Liu: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Fei Hou: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China
Qi Xiang: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Feibo Du: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China
Cong Yan: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Tianzhi Gao: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Zhiwei Liu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, China

DOI: https://doi.org/10.3390/mi14030632
Journal volume & issue: Vol. 14, no. 3
p. 632

Abstract

Read online

In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (Vt1) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low Vt1 characteristic but less area penalty of ~44.3% reduction. The results of the transmission line pulsing (TLP) measurement shows that the MTSCR possesses above 2.42 V holding voltage (Vh) and a low Vt1 of ~5.03 V, making it very suitable for the ESD protections for 1.8 V input/output (I/O) ports in CMOS technologies.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

About the journal

Abstract

Keywords