Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
Elisha Mercado,
Yan Zhou,
Yong Xie,
Qinghua Zhao,
Hui Cai,
Bin Chen,
Wanqi Jie,
Sefaattin Tongay,
Tao Wang,
Martin Kuball
Affiliations
Elisha Mercado
Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.
Yan Zhou
Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.
Yong Xie
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, P. R. China
Qinghua Zhao
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, P. R. China
Hui Cai
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, United States
Bin Chen
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, United States
Wanqi Jie
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, P. R. China
Sefaattin Tongay
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, United States
Tao Wang
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, P. R. China
Martin Kuball
Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.
