Nature Communications (Oct 2021)

A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

  • Yifei Yang,
  • Mingkun Xu,
  • Shujing Jia,
  • Bolun Wang,
  • Lujie Xu,
  • Xinxin Wang,
  • Huan Liu,
  • Yuanshuang Liu,
  • Yuzheng Guo,
  • Lidan Wang,
  • Shukai Duan,
  • Kai Liu,
  • Min Zhu,
  • Jing Pei,
  • Wenrui Duan,
  • Dameng Liu,
  • Huanglong Li

DOI
https://doi.org/10.1038/s41467-021-26399-1
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 12

Abstract

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Resistive switching devices have great promise for a wide variety of technological applications. Here, Yang et al demonstrate that electrochemically induced tellurium filament can give rise to resistive switching, and show that devices based on this can provide a number of advantages compared to metallic filament-based devices.