DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content

Abstract

Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.

Keywords

• SiGe
• metamorphic MOSFET
• LF-noise
• I-V
• C-V
• effective hole mobility