Advances in low dimensional and 2D materials

Abstract

This special issue is focused on the advances in low-dimensional and 2D materials. 2D materials have gained much consideration recently due to their extraordinary properties. Since the isolation of single-layer graphene in Novoselov et al. [Science 306, 666–669 (2004)], the work on graphene analogs of 2D materials has progressed rapidly across the scientific and engineering fields. Over the last ten years, several 2D materials have been widely explored for technological applications. Moreover, the existence in nature of layered crystallographic structures where exotic properties emerge when the thickness is reduced to a few monolayers has enlarged the field of low-dimensional (i.e., quasi-2D) materials. The special topic aims to collect the recent advances in technologically relevant low-dimensional and 2D materials, such as graphene, layered semiconductors (e.g., MoS2, WS2, WSe2, PtSe2, MoTe2, Black-P, etc.), MXenes, and topological insulators, such as Bi2Te3, Sb2Te3, etc.). There is an urgent need for material innovations for the rapid development of the next technologies based on these materials. The scope of this special topic is to address recent trends in 2D materials and hybrid structures and their widespread applications in device technology and measurement.