Pseudogap metal and magnetization plateau from doping moiré Mott insulator

Abstract

The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moiré materials opens a new ground for simulating the Hubbard model on the triangular lattice and exploring its rich phase diagram as a function of doping and external magnetic field. Based on our recent identification of spin polaron quasiparticle in Mott insulator, in this work we predict the emergence of a pseudogap metal phase at small doping below half filling and an intermediate range of fields, which exhibits a single-particle gap and a doping-dependent magnetization plateau.