A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study

Abstract

For the first time, a new structure is proposed for tunneling CNTFET (T-CNTFET). In this new structure, the drain region is divided into two parts, and the part near the channel has a linear doping profile. This new structure is called T-CNTFET with linear doping in drain (LD-T-CNTFET). The obtained results using a non-equilibrium Green’s function (NEGF) method show that the LD-T-CNTFET compared with conventional T-CNTFET leads to increase in ON current, reduction in OFF current, increasing current ratio, reducing sub-threshold swing, reducing power consumption and increasing the transistor speed. In addition to the mentioned benefits, the LD-T-CNTFET structure increases the cutoff frequency in comparison with conventional T-CNTFET structure. Therefore, it can be said that LD-T-CNTFET is a proper structure for the applications with low power consumption and high speed.

Keywords

• tunneling
• ld-t-cntfet
• quantum simulation
• negf
• power consumption
• cutoff frequency