Energy Reports (Nov 2019)

Field performance evaluation of various crystalline silicon photovoltaic technologies in Pingshan, China

  • Cao Yu,
  • Jing Chai,
  • Shuwei Han,
  • Zi Liu,
  • Xiaobo Li,
  • Jianxi Yao

Journal volume & issue
Vol. 5
pp. 525 – 528

Abstract

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The field performance of three different crystalline silicon photovoltaic (PV) module technologies in Pingshan, China (BSk climate based on the Köppen–Geiger climate classification) is analyzed and compared, including p-type multicrytalline silicon (multi-Si), p-type monocrystalline silicon (mono-Si) and n-type mono-Si modules. Both p-type multi-Si and mono-Si solar cells are of the conventional type with back-surface field, whereas the n-type device is of the heterojunction (HET) type. From January 2017 to December 2018, the n-type HET modules showed the best field performance (in terms of kWh/kWp) with an average daily energy yield of 3.9 kWh/kWp. The p-type multi-Si and mono-Si modules performed similarly with an average daily energy yield of 3.7 kWh/kWp (marginally better for multi-Si modules). On-site measurements also showed that the location has a ‘blue-rich’ and ‘red-rich’ spectrum in the summer and winter, respectively. In general, the spectral effect is positive in the summer, and negative in the winter, for all three investigated c-Si PV technologies. Besides, the spectral effect slightly favors the HET technology in the summer, but the opposite is true for mono-Si and multi-Si devices in the winter. Keywords: Photovoltaics, Crystalline silicon, Field performance, Spectral mismatch, Energy yield