CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS

Abstract

The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formation of the vapor-gas mixture. The films were produced on the Easytube 3000 chemical synthesis unit from the manufacturer Firstnano. X-ray patterns of synthesized samples were obtained and investigated.

Keywords

• карбид кремния
• тонкие пленки
• химическое осаждение
• silicon carbide
• thin films
• chemical deposition