Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates
C. Adamo,
L. Méchin,
T. Heeg,
M. Katz,
S. Mercone,
B. Guillet,
S. Wu,
J.-M. Routoure,
J. Schubert,
W. Zander,
R. Misra,
P. Schiffer,
X. Q. Pan,
D. G. Schlom
Affiliations
C. Adamo
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
L. Méchin
Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
T. Heeg
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
M. Katz
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
S. Mercone
Laboratoire de Sciences des Procédés et des Matériaux, UPR3407, CNRS, Institut Galilee, Universite Paris-Nord, Villetaneuse, France
B. Guillet
Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
S. Wu
Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
J.-M. Routoure
Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
J. Schubert
Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425, Germany
W. Zander
Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425, Germany
R. Misra
Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
P. Schiffer
Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
X. Q. Pan
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
D. G. Schlom
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.
