Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Abstract

Abstract Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering technique or high‐temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low‐temperature (103 are achieved for the first time. The low‐temperature solution processability of these FETs makes them particularly attractive for applications in low‐cost, large‐area transparent electronics.

Keywords

• ferroelectric dielectrics
• field‐effect transistors
• perovskite semiconductors
• solution‐process
• transparent electronics