Discover Nano (Jul 2023)

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

  • Fu-He Hsiao,
  • Tzu-Yi Lee,
  • Wen-Chien Miao,
  • Yi-Hua Pai,
  • Daisuke Iida,
  • Chun-Liang Lin,
  • Fang-Chung Chen,
  • Chi-Wai Chow,
  • Chien-Chung Lin,
  • Ray-Hua Horng,
  • Jr-Hau He,
  • Kazuhiro Ohkawa,
  • Yu-Heng Hong,
  • Chiao-Yun Chang,
  • Hao-Chung Kuo

DOI
https://doi.org/10.1186/s11671-023-03871-z
Journal volume & issue
Vol. 18, no. 1
pp. 1 – 11

Abstract

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Abstract In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

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